sm120mh~sm1100mh 20 ~ 100 v 1.0 amp surface mount schottky barrier rectifiers elektronische bauelemente 16-jul-2010 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? cathode ? ? anode rohs compliant product a suffix of ?-c? specifies halogen-free and rohs compliant features ? batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. ? low profile surface mounted application. in order to optimize board space. ? low power loss and low forward voltage drop ? high surge, high current capability, and high efficiency. ? fast switching for high efficiency. ? guard-ring for overvoltage protection. ? ultra high-speed switching ? silicon epitaxial planar chip, metal silicon junction. packaging information ? small plastic smd package. ? case: molded plastic ? epoxy: ul94-v0 rate flame retardant ? weight: 0.0110 g (approximately) marking code part number marking code part number marking code sm120mh 12 sm160mh 16 SM130MH 13 sm180mh 18 sm140mh 14 sm1100mh 10 sm150mh 15 maximum ratings (t a = 25c unless otherwise specified.) parameters symbol part numbers units testing conditions sm 120 mh sm 130 mh sm 140 mh sm 150 mh sm 160 mh sm 180 mh sm 1100 mh recurrent peak reverse voltage (max.) v rrm 20 30 40 50 60 80 100 v rms voltage (max.) v rms 14 21 28 35 42 56 70 v reverse voltage (max.) v r 20 30 40 50 60 80 100 v forward voltage (max.) v f 0.50 0.70 0.85 v forward rectified current (max.) i o 1.0 a see fig.1 peak forward surge current i fsm 25 a 8.3ms single half sine-wave superimposed on rated load (jedec method) reverse current (max.) i r 0.5 ma v r =v rrm , t a =25 c 10 v r =v rrm , t a =125 c thermal resistance (typ.) r ? ja 98 c/w junction to ambient diode junction capacitance (typ.) c j 120 pf f=1mhz and applied 4v dc reverse voltage storage and operating temperature range t stg , t j -65 ~ 175, -55 to 125 -65 ~ 175, -55 to 150 c ref. millimete r ref. millimete r min. max. min. max. a 3.30 3.70 d 3.10 (max.) b 1.50 1.90 e 0.80 (typ.) c 0.60 1.00 f 0.30 (typ.) e e f b c d a sod-123mh
sm120mh~sm1100mh 20 ~ 100 v 1.0 amp surface mount schottky barrier rectifiers elektronische bauelemente 16-jul-2010 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ratings and characteristic curves 0.1 1.0 .01 10 50 fig.1-typical forward current derating curve average forward current,(a) fig.4-typical junction capacitance reverse voltage,(v) junction capacitance,(pf) instantaneous forward current,(a) forward voltage,(v) pulse width 300us 1% duty cycle 0.2 0.4 0.6 0.8 1.0 1.2 350 300 250 200 150 100 50 0 .01 .05 .1 .5 1 5 10 50 100 .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 .1 1.0 10 100 fig.5 - typical reverse characteristics reverse leakage current, (ma) 0 20 40 60 80 100 120 140 .01 t =75 c j sm120-mh~sm 1 40-mh sm1 50-mh~s m 1100-mh sm 150-mh~sm160-m h sm180-m h~ sm1100-mh sm 120-m h ~s m14 0-m h t =25 c j t =25 c j ambient temperature,( c) 0 0 20 40 60 80 100 120 140 160 180 200 fig.2-typical forward characteristics percent of rated peak reverse voltage,(%) fig.3-maximum non-repetitive forward surge current number of cycles at 60hz 1 10 5 50 100 t =25 c j 8.3ms single half sine wave jedec method peak forward surge current,(a) 0 10 5 15 25 20
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